having at least two inputs acting on one output Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. having at least two inputs acting on one output Inverting circuits using specified components using semiconductor devices using field-effect transistors having at least two inputs acting on one output Inverting circuits using specified components using semiconductor devices
having at least two inputs acting on one output Inverting circuits using specified components having at least two inputs acting on one output Inverting circuits
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H02M1/088- Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices.H02M1/08- Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters.H02M1/00- Details of apparatus for conversion.H02M- APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER CONTROL OR REGULATION THEREOF.H02- GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER.Assignors: MIN, SUNG-KI, SHIN, YUN-SEUNG Application granted granted Critical Publication of US4948990A publication Critical patent/US4948990A/en Anticipated expiration legal-status Critical Status Expired - Fee Related legal-status Critical Current Links reassignment SAMSUNG ELECTRONICS CO., LTD. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from KR88-4540 external-priority Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd Assigned to SAMSUNG ELECTRONICS CO., LTD. Original Assignee Samsung Electronics Co Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Fee Related Application number US07/292,883 Inventor Yun-Seung Shin Sung-Ki Min Current Assignee (The listed assignees may be inaccurate.
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Google Patents US4948990A - BiCMOS inverter circuitĭownload PDF Info Publication number US4948990A US4948990A US07/292,883 US29288389A US4948990A US 4948990 A US4948990 A US 4948990A US 29288389 A US29288389 A US 29288389A US 4948990 A US4948990 A US 4948990A Authority US United States Prior art keywords transistor mos transistor source inverter circuit type mos Prior art date Legal status (The legal status is an assumption and is not a legal conclusion.
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